Chinese Optics Letters, 2010, 8 (3): 306, Published Online: Mar. 11, 2010
Investigation on LaF3/porous silicon system for photonic application Download: 606次
多孔硅 阳极腐蚀 光致发光 表面钝化 光电 160.2540 Fluorescent and luminescent materials 250.5230 Photoluminescence 160.5690 Rare-earth-doped materials
Abstract
We present the investigation on LaF<sub>3</sub>/porous silicon (PS) system that has properties of both the materials to be applied in photonics. Epilayers of LaF<sub>3</sub> are grown on PS under different anodization conditions using electron-beam evaporation (EBE). The characteristics of the LaF<sub>3</sub>/PS system are analyzed by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), and photoluminescence (PL). XRD confirms the polycrystalline nature of the LaF<sub>3</sub> film. Nearly stoichiometric growth of LaF<sub>3</sub> on PS is established by EDX. Such a thin LaF<sub>3</sub> layer grown on PS leads to a good enhancement of PL yield of PS. But with the increasing thickness of LaF<sub>3</sub> layer, PL intensity of PS is found to decrease along with a small blue-shift.
Halima Khatun, Sinthia Shabnam Mou, Abdul Al Mortuza, Abu Bakar Md. Ismail. Investigation on LaF3/porous silicon system for photonic application[J]. Chinese Optics Letters, 2010, 8(3): 306.