基于国内的材料生产和半导体工艺条件,研制了10 Gb/s光电集成(OEIC)光接收机前端,并采用耗尽型赝配高电子迁移晶体管(PHEMT)设计并实现了限幅放大器。光接收机前端组成形式为金属-半导体-金属(MSM)光探测器和电流模跨阻放大器,借助模拟软件SILVACO建立并优化了器件模型,探测器光敏面50 μm×50 μm,带宽超过10 GHz,电容约3 fF/μm。研究并改进了腐蚀自停止工艺并实际应用于OEIC器件制作,芯片面积为1511 μm×666 μm。限幅放大器采用无源电感扩展带宽,并借助三维电磁仿真软件HFSS进行模拟仿真。限幅放大器芯片面积为1950 μm×1910 μm,在3.125 Gb/s传输速率下,分别输入信号幅度为10和500 mV,可以得到500 mV恒定输出摆幅。

A 10 Gb/s optoelectronic integrated circuits (OEIC) optical receiver front-end has been studied and fabricated based on domestic material and semiconductor process. A limiting amplifier (LA) has been designed and realized by using depletion mode pseudomorphic high electron mobility transistor (PHEMT). The OEIC optical receiver comprises a metal-semiconductor-metal (MSM) photodetector and a current mode transimpedance amplifier (TIA),and a device model has been established and optimized by simulation software SILVACO. The photodetector has a photosensitive area of 50 μm×50 μm,a bandwidth of 10 GHz and a capacitance of 3 fF/μm. The etch-stop process has been developed completely and applied to the fabrication of OEIC device,and the chip has an area of 1511 μm×666 μm. The bandwidth of LA is expanded by inductance which has been simulated by software HFSS. The chip area is 1950 μm×1910 μm and the measured results demonstrate a transfer rate of 3.125 Gb/s (10 and 500 mV) with constant output swing 500 mV.