利用自行设计的实验装置,研究了同步辐射光活化氧对光学元件表面碳污染的清洗作用。清洗前样品的碳层厚度为10.3 nm,同步辐射光被引入实验用真空室内,真空室内干燥氧气的压强维持在1.0 Pa,研究显示同步辐射活化氧能有效地清除硅片表面的石墨型碳层。通过测试清洗前后碳膜的反射率和使用IMD软件对清洗后硅片反射率的拟合,可得碳层的去除率为1.75 nm/h。

An optical element cleaning experiment with activated oxygen by synchrotron radiation (SR) is designed to research the cleaning process of carbon contaminated optical element surface. The thickness of sample carbon contamination layer is about 10.3 nm before cleaning process. Synchrotron radiation light is guided into a vacuum chamber which is filled with 1.0 Pa dry oxygen. The research shows that oxygen can be activited by SR and the graphite-like C on Si wafer can be removed effectively. By measuring the reflectivities of sample before and after cleaning process and comparing with IMD simulations,the C removal rate is about 1.75 nm/h.