在室温条件下采用离子辅助沉积技术在柔性衬底上依次制备无机缓冲层及In2O3:SnO2(ITO)薄膜,重点研究了不同无机缓冲层对柔性ITO薄膜光电及耐弯曲性能的影响。研究发现SiO2,TiO2,Ta2O5和Al2O3无机缓冲层对ITO薄膜的方阻、光学透射比、耐弯曲性能等机电特性影响各异:添加SiO2缓冲层的ITO薄膜其方阻变化率最大,方阻降低率达29.8%,而添加Al2O3缓冲层的ITO薄膜其方阻变化率最小,方阻降低率仅为5.6%;添加Ta2O5缓冲层的ITO薄膜其可见光透射比最佳,平均透射比达85%以上,而添加SiO2缓冲层的ITO薄膜其可见光透射比最差,但其平均透射比也高于80%;SiO2在耐弯曲半径上对ITO薄膜的改善效果比TiO2更佳,而当ITO薄膜以弯曲半径R=0.8 cm和R=1.2 cm发生内弯时,SiO2对ITO薄膜耐弯曲次数性能的改善效果不及TiO2。

Inorganic buffer layers and transparent conductive In2O3:SnO2 (ITO) films were deposited sequentially on flexible polyethylene terephthalate (PET) substrates by ion assisted deposition(IAD)at room temperature. The effects of inorganic buffer layers on the photoelectric properties and bending resistance performance of flexible ITO films were investigated detailedly. The results show that the effects of SiO2,TiO2,Ta2O5 and Al2O3 buffer layers on the sheet resistance,optical transmittance and bending resistance performance of ITO films are different. Adding SiO2 to reduce the sheet resistance of ITO films is the best proposal,of which the reducing rate reaches 29.8%,but adding Al2O3 is inadvisable,of which the reducing rate is only 5.6%;The visible light transmittance of ITO films with Ta2O5 is optimal,of which the average transmittance is over 85%,and the average transmittance of ITO films with SiO2 is above 80%. It is found that the ITO films with SiO2 have better resistance stabilities compared to ones with TiO2 when the ITO films are bent at the same bending radius,but the ITO films with SiO2 have worse resistance stabilities compared to ones with TiO2 when the ITO films are inwards bent at the bending radius of R=0.8 cm and R=1.2 cm.