Chinese Optics Letters, 2010, 8 (4): 361, Published Online: Apr. 20, 2010
Influence of annealing temperature on the performance of Ge film and photon-counting imaging system Download: 567次
Ge膜 退火 电荷感应 光子计数 160.6000 Semiconductor materials 030.5260 Photon counting 110.2970 Image detection systems 100.0100 Image processing
Abstract
Compared with the traditional image intensifier with phosphor screen readout, the photon-counting imaging detector with charge induction readout is more beneficial in several aspects (e.g., good imaging properties and time resolution) to astronomy, reconnaissance, bioluminescence, and materials research. However, the annealing temperature during the tube-making process can affect the properties of the Ge film, and consequently impair the performance of the detector. Therefore, the influence of annealing temperature on Ge film and on the detector is studied in order to determine the crucial parameters. The Ge films are prepared on ceramic and quartz glass by the use of an electron gun. They are analyzed by scanning electron microscope (SEM), high-resistance meter, and X-ray diffraction (XRD). The results show that the optimum substrate and annealing temperature are ceramic plate and 250 ℃, respectively.
Feifei Zhao, Baosheng Zhao, Xiaofeng Sai, Xinghua Zhang, Yonglin Wei, Wei Zou. Influence of annealing temperature on the performance of Ge film and photon-counting imaging system[J]. Chinese Optics Letters, 2010, 8(4): 361.