掺杂氧化锌(ZnO)薄膜是一种新型的透明导电氧化物(TCO)材料,因有替代氧化铟锡(ITO)的潜能而成为当今TCO材料中的研究热点,其优异的光学和电学性能使其在平板显示器、太阳能电池等光电器件中具有光明的应用前景。文章对ZnO基半导体材料的结构和性能进行了介绍,综述了近年来以ZnO薄膜为基体的n型和p型掺杂的研究进展,并在此基础上对未来的发展方向进行了展望。

The doped ZnO film is a new type of transparent and conductive oxide (TCO) material which was widely studied by the researchers because of its potential candidate to replace the ITO. There are a lot of potential applications in the liquid crystal devices,solar cells,et al,due to its excellent electrical and optical properties. Compared to the previous works,the latest developments of the n-type and p-type ZnO semiconductors in the past two years were summarized and future works were indicated and discussed in this paper.