光子学报, 2009, 38 (4): 823, 网络出版: 2010-05-10
HFCVD法制备纳米晶体碳化硅薄膜中氢流量对晶粒尺寸的影响
Influence of Hydrogen Flow on Grain Size of Nano-Crystalline Sic Films Grown by HFCVD Method
摘要
以甲烷、硅烷和氢气为反应气体，采用热丝化学气相沉积（HFCVD）法在单晶硅衬底上沉积纳米晶体碳化硅(SiC)薄膜.通过X射线衍射(XRD)和扫描电子显微镜（SEM）分别对SiC薄膜的晶体结构和表面形貌进行分析.实验发现氢气流量对碳化硅薄膜晶粒尺寸有很大影响，当氢气流量从10SCCM变化到300SCCM时，薄膜晶粒的平均尺寸将由较大的400 nm左右减小到40 nm左右.
Abstract
Nano-crystalline silicon carbide (SiC) thin films were deposited on monocrystalline silicon polished wafer substrate by hot filament chemical vapor deposition (HFCVD) technique with CH4,SiH4 and H2 as reaction gases.X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) were performed to study structure properties and surface micrography of the thin films,respectively.The results indicate that the hydrogen flow rate has a significant effect on grain size of the nano-crystalline SiC films.The grain size of SiC films decreases from 400nm to 40nm as hydrogen flow increases from 10 SCCM to 300 SCCM.
赵武, 张志勇, 翟春雪, 闫军锋, 邓周虎. HFCVD法制备纳米晶体碳化硅薄膜中氢流量对晶粒尺寸的影响[J]. 光子学报, 2009, 38(4): 823. ZHAO Wu, ZHANG Zhi-yong, ZHAI Chun-xue, YAN Jun-feng, DENG Zhou-hu. Influence of Hydrogen Flow on Grain Size of Nano-Crystalline Sic Films Grown by HFCVD Method[J]. ACTA PHOTONICA SINICA, 2009, 38(4): 823.
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