光子学报, 2009, 38 (12): 3121, 网络出版: 2010-05-10
ZnO-SnO2透明导电薄膜的制备及性能研究
Preparation and Characterization of ZnO-SnO2 Transparent and Conducting Thin Film
二步法 锌锡摩尔配比 透明导电薄膜 Gelatination in two-step ZnO-SnO2 ZnO-SnO2 Moore ratio of zinc and stannum Transparent and conducting thin film
摘要
采用二步成胶工艺制备ZnO-SnO2透明导电薄膜,应用X射线衍射、原子力显微镜、紫外-可见分光光度计、薄膜分析仪及四探针仪等对薄膜的结构、表面微观形貌、透过率和导电性能进行表征.结果表明,锌锡摩尔比为9/12,退火温度为500 ℃时,薄膜的透过率达90%,电阻率为3.15×10-3 Ω·cm.与其它工艺相比,二步成胶工艺所制备出的ZnO-SnO2透明导电薄膜性能优异.
Abstract
Transparent and conducting polycrystalline oxide thin films of ZnO-SnO2 are prepared on glass subsrate by the process of gelatination in two-step.The crystalline structure of the thin film, surface morphology, optical transmittance and conductivity are characterized by X-ray diffraction(XRD), Atomic force microscope(AFM), Spectrophotometeric analysis(UV-Vis),device of film analysis and Four-point probes, respectively.The results indicate that the transparent conducting thin film with Zn/Sn=9/12 has the optimal performance at the annealing tempareture of 500 ℃ and the ultraviolet-visible light transmittance reached 90% with 3.15×10-3 Ω·cm resistance.Compared with other methods,transparent and conducting thin films of ZnO-SnO2 prepared by gelatination in two-step has excellent characteristics.
王峰, 张志勇, 闫军锋, 李林, 贠江妮. ZnO-SnO2透明导电薄膜的制备及性能研究[J]. 光子学报, 2009, 38(12): 3121. 王峰, 张志勇, 闫军锋, 李林, 贠江妮. Preparation and Characterization of ZnO-SnO2 Transparent and Conducting Thin Film[J]. ACTA PHOTONICA SINICA, 2009, 38(12): 3121.