以宽禁带半导体氮化镓材料制备了金属-半导体-金属型的紫外光电探测器。材料生长是以MOCVD设备完成的,为非故意掺杂的n型材料。器件在362 nm处具有陡峭的截止边,表现出可见盲特性,在15 V偏压下响应度为071 A／W,紫外／可见抑制比接近103。通过击穿单侧肖特基结对另一侧的肖特基结进行测试,结果表明肖特基结具有较理想的特性,并以此对器件的工作方式和设计优化进行了讨论分析。

A metal-semiconductor-metal ultraviolet photodetector was fabricated on wide bandgap undoped n-GaN grown by metalorganic chemical vapor deposition(MOCVD). The device is visible blind, with an ultraviolet／green contrast of near three orders of magnitude. The detector exhibits a sharp cut-off at 362 nm wavelength with peak responsivity of 071 A／W at bias of 15 V. We measure Schottky junction through breakdown other side of the Schottky junction, and analyze working mode and design optimization of this device.姜文海|jwhjlu@yahoo.com.cn