根据由离子束刻蚀HgCdTe pn结C-V曲线,判定其为线性缓变结;由1C3-V曲线斜率可知杂质浓度分布梯度。利用泊松方程(零偏压时耗尽层宽度作为边界条件)积分计算出其电场分布、电势分布等重要结特性。并且进一步从微观理论分析讨论了离子束刻蚀HgCdTe成结机制过程。

The HgCdTe pn junction formed by ion beam milling is a linearly graded junction judged by its C-V curve. And the grade of impurity concentration distribution was known from 1C3-V curve. Some important characteristics,such as build-in electric field distribution, build-in potential distribution were calculated by poisson′equation. Then the process and mechanism of HgCdTe ion beam milling junction have already been analyzed based on micro-theory in detail.E-mail: 何波|laserheebo@shu.edu.cn