光电子技术, 2009, 29 (2): 82, 网络出版: 2010-05-10
HgCdTe阳极硫化+ZnS钝化膜表面与界面的研究
A Study of Anodic Sulfide+ZnS Surface Passivation of HgCdTe
摘要
报道了HgCdTe阳极硫化+ZnS钝化膜表面与界面X射线光电子能谱(XPS)的研究及结果。系统地介绍了HgCdTe阳极硫化+ZnS钝化膜的制备,Br2-CH3OH与HgCdTe化学抛光的反应过程,阳极硫化的化学组成及生长机制。阐述了该钝化结构不同深度的组分分布及其对HgCdTe光伏器件电学特性的影响。
Abstract
The XPS result of anodic sulfide+ZnS Passivation is briefly reported. Preparation and basic principle of Br2-CH3OH surface treatment, chemical components of anodic sulffide layer and growing theory are presented completely. Finally, component distribute at different depth of the passivation structure and effect on PV device are described.何波|laserhebo@shu.edu.cn)<基金项目>
何波, 马忠权, 史衍丽, 徐静, 赵磊, 李凤, 沈成, 沈玲. HgCdTe阳极硫化+ZnS钝化膜表面与界面的研究[J]. 光电子技术, 2009, 29(2): 82. 何波, 马忠权, 史衍丽, 徐静, 赵磊, 李凤, 沈成, 沈玲. A Study of Anodic Sulfide+ZnS Surface Passivation of HgCdTe[J]. Optoelectronic Technology, 2009, 29(2): 82.