采用直流磁控溅射法,当衬底温度为室温时,在普通玻璃衬底上制备出了低电阻率、高透过率的ZnO∶Al透明导电薄膜。研究了薄膜厚度对薄膜结构以及光电特性影响。当薄膜厚度为930 nm,薄膜的光电特性最好,电阻率为4.65×10-4 Ω·cm,可见光范围内的平均透过率为85.8％,禁带宽度约为3.51 eV。

Transparent and conductive thin films of ZnO doped Al with low resistivities, high transmittances have been prepared by DC magnetron sputtering on glass substrates at room temperature. The structural, electrical, and optical properties as a function of film thickness were investigated. When the film thickness is 930 nm, the film with resistivity of 4.65×10-4Ω·cm and transmittance of 85.8％ is obtained, corresponding gap band is 3.51 eV.