利用饱和吸收的方法得到了铯分子在780 nm附近X1Σ+g→B1Πu能级跃迁吸收带的一段饱和吸收谱,利用铷87Rb原子饱和吸收谱的5S1/2(F=2)→5P3/2(F′=2)的跃迁线为标准确定这一段饱和吸收谱的位置。实验中对其中的5条吸收峰进行了仔细观测,利用其中的一条饱和吸收峰“R5”对780 nm半导体激光器进行了稳频。测得稳频后的激光在800 s内频率的漂移小于1.5 MHz,从而提供了一种利用铯分子饱和吸收峰对780 nm半导体激光器进行稳频的新方法。此激光可以用于制备超冷基态铯分子,同时也可作为光通信波段1560 nm处的倍频参考光。

One part of the saturated absorption spectroscopy on cesium molecules near 780 nm at the absorption band X1Σ+g→B1Πu is obtained. The position of cesium molecular saturated absorption spectroscopy can be determined by 5S1/2(F=2)→5P3/2(F′=2) resonance line of the saturated absorption spectroscopy on 87Rb atom. The five absorption peaks of the saturated absorption spectroscopy are observed. The 780 nm diode laser is stabilized to the “R5” absorption peak. The frequency stability of the laser is better than 1.5 MHz in 800 s. It offers a new method to stabilize the 780 nm diode laser frequency by the saturated absorption peak of cesium molecules. This laser can be used to produce the ultracold ground state cesium molecules,and can be used as the frequency-doubled reference of optical communication range in 1560 nm.