中国激光, 2010, 37 (5): 1186, 网络出版: 2010-05-11   

一种新型大功率单发射腔半导体激光器及其特性

A New Package Structure for High Power Single Emitter Semiconductor Laser and Performance Analysis
作者单位
1 中国科学院 西安光学精密机械研究所 瞬态光学与光子技术国家重点实验室,陕西 西安 710119
2 西安炬光科技有限公司,陕西 西安 710119
3 上海交通大学 理学院,上海 200240
摘要
中国科学院“计划”项目资助课题。
Abstract
A new high power single emitter laser (F-mount) is reported. This package structure is different from the commercial products structure with C-mount,and it has an advantage of higher thermal conduction. The maximum output optical power of 13.3 W through this package structure is obtained under the testing condition of continuous waves (CW) at 20 ℃ and the laser can still work well. There was no catastrophic mirror-damage (COMD) occurred on it. The maximum output optical power of 30.8 W is obtained under the testing condition of quasi-continuous wave (QCW). Moreover,the following parameters are calculated with coefficient of wavelength-shift versus temperature of 0.278 nm/℃,thermal resistance of 3.18 K/W,the characteristic temperature of 135 K at the threshold current at room temperature,the characteristic temperature of 743 K for the differential efficiency at room temperature. It has lower thermal resistance and better heat sink capability and higher output power than commercial single emitter laser packaged with C-mount structure.

张彦鑫, 王警卫, 吴迪, 杨凯, 马幼龙, 刘兴胜. 一种新型大功率单发射腔半导体激光器及其特性[J]. 中国激光, 2010, 37(5): 1186. Zhang Yanxin, Wang Jingwei, Wu Di, Yang Kai, Ma Youlong, Liu Xingsheng. A New Package Structure for High Power Single Emitter Semiconductor Laser and Performance Analysis[J]. Chinese Journal of Lasers, 2010, 37(5): 1186.

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