中国激光, 2010, 37 (5): 1186, 网络出版: 2010-05-11
一种新型大功率单发射腔半导体激光器及其特性
A New Package Structure for High Power Single Emitter Semiconductor Laser and Performance Analysis
激光器 半导体激光器 高功率 单发射腔 热阻 特征温度 lasers semiconductor laser high power single emitter thermal resistance characteristic temperature
摘要
中国科学院“计划”项目资助课题。
Abstract
A new high power single emitter laser (F-mount) is reported. This package structure is different from the commercial products structure with C-mount,and it has an advantage of higher thermal conduction. The maximum output optical power of 13.3 W through this package structure is obtained under the testing condition of continuous waves (CW) at 20 ℃ and the laser can still work well. There was no catastrophic mirror-damage (COMD) occurred on it. The maximum output optical power of 30.8 W is obtained under the testing condition of quasi-continuous wave (QCW). Moreover,the following parameters are calculated with coefficient of wavelength-shift versus temperature of 0.278 nm/℃,thermal resistance of 3.18 K/W,the characteristic temperature of 135 K at the threshold current at room temperature,the characteristic temperature of 743 K for the differential efficiency at room temperature. It has lower thermal resistance and better heat sink capability and higher output power than commercial single emitter laser packaged with C-mount structure.
张彦鑫, 王警卫, 吴迪, 杨凯, 马幼龙, 刘兴胜. 一种新型大功率单发射腔半导体激光器及其特性[J]. 中国激光, 2010, 37(5): 1186. Zhang Yanxin, Wang Jingwei, Wu Di, Yang Kai, Ma Youlong, Liu Xingsheng. A New Package Structure for High Power Single Emitter Semiconductor Laser and Performance Analysis[J]. Chinese Journal of Lasers, 2010, 37(5): 1186.