Chinese Optics Letters, 2010, 8 (s1): 91, Published Online: May. 14, 2010
Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer Download: 830次
高质量锗薄膜 硅锗插入层 低温锗缓冲层 310.1860 Deposition and fabrication 310.6845 Thin film devices and applications 310.6870 Thin films, other properties
Abstract
Pure Ge is grown on Si substrate to control the release of the strain in the heterostructure, which is due to the 4.2% lattice misfit between Ge and Si. In this letter, an innovative approach of multi-buffer layers is proposed for the epitaxial growth of high quality Ge thin films on Si (001) substrates in a molecular beam epitaxy system. The multi-buffer layers, including the low temperature Ge seed layer and the Si-Ge alloy intermediate layer fabricated under different temperatures, serve as defect gathering and annihilating sites to reduce the dislocation density in the top layers. The result reveals that the total thickness of the whole structure is less than 400 nm, with a low threading dislocation density of less than 5×10<sup>5</sup> cm<sup>-2</sup> in the top layer and a root mean square surface roughness of 1.5 nm.
Chong Zhang, Hui Ye, Lei Zhang, Yourui Huangfu, Xu Liu, Jinzhong Yu. Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer[J]. Chinese Optics Letters, 2010, 8(s1): 91.