在固态阴极射线发光中, 过热电子碰撞激发有机材料而发光, 因此加速层对电子的加速能力是影响器件发光亮度的关键因素之一。 分别以SiO2和ZnO作为加速层, 制备出两种固态阴极射线发光器件A： ITO/MEH-PPV/SiO2/Al和B： ITO/MEH-PPV/ZnO/Al。 通过理论计算比较了电子从电极注入到加速层的隧穿电流密度以及SiO2层与ZnO层的电场强度, 计算结果表明： 在相同驱动电压下, SiO2作为电子加速层时隧穿电流的密度要大于ZnO层的隧穿电流的密度, 并且SiO2层的电场强度比ZnO层的电场强度大。 实验结果表明： SiO2作为加速层的器件的发光强度高于以ZnO为电子加速层器件的发光强度。

Solid state cathodoluminescence is a brand-new excitation mode. In the device, electron acceleration layer plays a very important role in obtaining high energy hot electrons to excite organic luminescent materials in solid state cathodoluminescence. Two kinds of structural devices (A： ITO/MEH-PPV/SiO2/Al, B： ITO/MEH-PPV/ZnO/Al) were fabricated. The theoretical calculation and analysis show that the tunnel current and electric field was higher in SiO2 layer than that in ZnO layer under the same applied driving voltage. The experimental results show that the intensity of device A with SiO2 as electrons acceleration layer is stronger than that of device B with ZnO as electrons acceleration layer under the same driving voltage. And the result demonstrated that electrons in the conduction band of SiO2 can be heated to higher energy than that in ZnO.