红外探测器不论是在**还是在民用方面都有非常重要的应用。非致冷热释电红 外探测器由于具有光谱响应宽、无需致冷等显著优点，近年来成为红外成像领域的研究热点，其结构中 最关键的部分是敏感元。本文采用半导体光刻工艺和化学腐蚀的方法成功地对钛酸铅(PT)铁电薄膜进行 了刻蚀，同时采用剥离技术对相应的电极实现了图形化。

Infrared (IR) detectors have very important applications both in military field and in civil field. Because of the advantages of wide spectral response and uncooling, pyroelectric IR detectors have become a research focus in the IR imaging field in recent years. For the pyroelectric IR detector, the most critical part is the sensing element in its structure. In this paper, the plumbum titanate (PT) ferroelectric film is etched successfully by using a semiconductor lithography process and a chemical etching method. The corresponding electrodes are shaped by using a lift-off technique.