可以广泛应用于**和工农业生产上的CMOS紫外焦平面阵列(UVFPA)是近年来比较热门的研究课题。它可以比较 容易地实现日盲式紫外探测和可见光盲式紫外探测。但在CMOS UVFPA的研制中，读出集成电路(ROIC)成了制约其发展的很重要的一环。 ROIC芯片是实现探测器的信号输出的重要部件。混成式CMOS UVFPA要借助于先进的微电子封装工艺将ROIC与探测器 阵列集成在一起。其中则需要制备用于高密度、高精确度互连的阵列凸点。我们通过蒸发结合光刻法和电镀法分别 制备了线度为30-1.5mmμ-1.5mmm 30-1.5mmμ-1.5mmm的16 16凸点阵列。 并对两种制备方法做了比较，在分析了制作的凸点的质量后，认为经过改进的蒸发结合光刻法可以制作高质量的阵列凸点。

The CMOS UVFPA which can be widely used in military, industry and agriculture has become a hot research subject in recent years. With the CMOS UVFPA, the solar-blind UV detection and visible light-blind detection can be implemented easily. However, in the development of the CMOS UVFPA, the Read Out Integrated Circuit (ROIC) is a very important restriction. The ROIC chip is an important part to implement signal output from detectors. For a hybrid CMOS UVFPA, its ROIC chip and detector array can be integrated with each other only by using the advanced microelectronic encapsulation process. In the integration process, a high density and high precision interconnection bump array should be fabricated. In this paper, the 16 16 bump arrays with the bump size of 30-1.5mmμ-1.5mmm 30-1.5mmμ-1.5mmm are fabricated respectively by using a evaporation plus lithography method and a electroplating method. The analysis of the quality of the bumps fabricated by using these two methods shows that the improved evaporation plus lithography method can be used to fabricate bumps with high quality.