采用Langmuir-Blodgett(LB)膜静电诱导沉积法制备聚3,4-乙烯二氧噻吩(PEDOT)高度有序导电聚合物复合薄膜,研究了薄膜的导电性能并进一步研究薄膜在改善器件性能方面的作用。并将其应用于有机电致发光二极管(OLED)器件的空穴缓冲层,将聚3,4-乙烯二氧噻吩/聚苯乙烯磺酸(PEDOT/PSS)复合LB 沉积于纳米铟锡金属氧化物(ITO)电极上,制备了以复合LB 膜为空穴缓冲层的OLED 器件。发现复合LB 膜改善了器件性能(启动电压降低、最大亮度增加),但进一步的研究表明LB 膜器件在一定时间后出现性能劣化。I-V 特性和X 射线反射率(XRR)分析表明,薄膜的结构发生一定程度的改变是导致器件性能变差的可能原因。

A Langmuir-Blodgett (LB) inducing method was firstly used to prepare single layer and multilayer conducting composite PEDOT-PSS film. The application of PEDOT nanostructure to improve organic electric device performance of Organic Light Emitting Diode (OLED) was studied. Furthermore, these conducting polymeric LB films were taken as the hole transfer layer in OLED device, and an efficiency enhancement of carrier injection was observed, which was ascribed to the ordered structure of these film. However, a further investigation shows that this PEDOT-PSS film has inferior structure ability.