强激光与粒子束, 2010, 22 (2): 331, 网络出版: 2010-05-28
不同方法DKDP晶体生长和损伤阈值
Growth and laser damage threshold of DKDP crystal grown by different methods
摘要
生长方法是影响DKDP晶体生长和光损伤阈值的一个重要因素。分别采用传统降温法和点籽晶快速生长法,利用同种原料从氘化程度为85%的溶液生长了DKDP晶体,并选取部分Ⅱ类3倍频晶片进行3倍频光损伤阈值和透过性能测试。实验表明,不同生长方法对DKDP晶体的损伤阈值以及DKDP晶体的生长速度的影响效果正好相反,即由于生长溶液过饱和度的差别,点籽晶快速生长法晶体生长速度为传统方法的10倍,但晶体损伤阈值下降了50%,且紫外波段透过性能下降明显。
Abstract
Growth method is the dominating factor which greatly influences the growth and the laser damage threshold of the DKDP single crystal. In this paper,DKDP crystals were grown from 85%-deuterated solution by using traditional temperature-reduction method and point-seed rapid growth method respectively. Optical transmission and laser damage in unconditioned type Ⅱ tripler-cut DKDP crystals have been studied. It is found that,due to super-saturation effect,by using point-seed rapid growth method,the growth rate of DKDP is about 15 mm/day,which is ten times that by using traditional growth method. But more metallic ionic impurities and inclusions lead to the deterioration in the transmission spectra and laser induced damage threshold.
孙绍涛, 季来林, 王正平, 牟晓明, 孙洵, 许心光, 史崇德. 不同方法DKDP晶体生长和损伤阈值[J]. 强激光与粒子束, 2010, 22(2): 331. Sun Shaotao, Ji Lailin, Wang Zhengping, Mu Xiaoming, Sun Xun, Xu Xinguang, Shi Chongde. Growth and laser damage threshold of DKDP crystal grown by different methods[J]. High Power Laser and Particle Beams, 2010, 22(2): 331.