简要说明了非晶硅,多晶硅和有机半导体用作薄膜晶体管沟道层的不足,从电学性质,光学性质和制备温度等几方面介绍了氧化物薄膜晶体管在有源阵列驱动显示技术中的优势,并介绍了氧化物沟道层制备工艺的优化和掺杂方法.最后,展望了氧化物半导体薄膜晶体管应前景.

We reviewed the defects of amorphous silicon, polycrystalline silicon and organic semiconductors as the active channel layer of thin film transistors. The benefits of oxide based thin film transistor in active matrix display were introduced from electical,optial and fabrication temperature aspect. Then, we reviewed the optimize and doping of oxide channel layer. At the last, we prospected the utilization of oxide based TFTs and the problems existent.