采用无催化脉冲激光沉积(PLD)方法，在 InP(100)衬底上生长纳米ZnO柱状结构。采用扫描电子显微镜(SEM)、X射线衍射(XRD)以及光致发光(PL)谱等表征手段对ZnO纳米柱的形貌、晶体结构和光学特性进行了观察。SEM图像观察到ZnO纳米柱状结构具有一定的取向性；XRD测试在 2θ=34.10°处观测到强的ZnO(002)衍射峰，证实ZnO纳米柱具有较好的c轴择优取向；室温PL谱在379 nm处观察到了强的自由激子发射峰(半峰全宽为19 nm)，未探测到深能级跃迁发射峰，表明生长的纳米ZnO结构具有很高的光学质量。

One-dimensional (1D) semiconducting nanomaterials have attracted considerable interest for their potential applications in optoelectronic and microelectronic devices. Among thoses 1D semiconducting nanomaterials, ZnO is a wide band gap semiconductor and one of the most functional materials. On account of its many interesting properties, such as superior emission, chemical and thermal stability, transparency, biocompatibility, and wide electrical conductivity range, ZnO has a variety of applications in an emerging area of nanotechnology. Moreover, as a very important one of ZnO nanostructure groups, ZnO nanorods(NRs) have wide applications in nanoelectronics including nanobased light-emitting diodes (LEDs), field effect transistors (FETs), ultraviolet (UV) lasers, and nanogenerators. Until now, there are numerous experimental methods to prepare ZnO NRs involving molecular beam epitaxy (MBE), sputtering, electrochemical deposition, vapor phase transport (VPT), chemical vapor deposition (CVD), and thermal evaporation. However, most of these attempts need some kind of metals to act as a catalyzer. Aurum, zinc, argentine, and aluminium are often used in these methods, which make the prepared ZnO NRs impure. In the cases the metallic impurities have awful influence on the electrical and optical properties of ZnO NRs, an advanced and catalyst-free ZnO growth method needs to be exploited.In this paper, ZnO NRs were successfully synthesized on indium phosphide (InP) (100) substrates by using pulsed laser deposition (PLD) method with catalyst-free. The morphology, crystal structural and optical properties were characterized with scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) analytic approaches, respectively. SEM pattern showed the ZnO nanorods were well-oriented. From the XRD scan results, a strong peak was observed at 34.10° attributed to the ZnO (002) face, indicating that the growth direction is well-oriented along c axis. A typical PL spectrum was measured at room temperature, showing a strong free-excition emission at about 379 nm, with full width at half maximum (FWHM) value of 19 nm, no deep level emission was detected, indicating that the ZnO nanorods produced in this experiment are of high optical quality.