光电子技术, 2010, 30 (1): 64, 网络出版: 2010-05-31
基于碲锌镉探测器脉冲整形电路设计
Design of Pulse Shaped Circuit Based on CdZnTe Detector
摘要
CdZnTe晶体是性能优异的室温半导体核辐射探测新材料,针对该材料制作的探测器设计了一种脉冲整形电路。将Sallen-Key滤波器应用于核脉冲的整形中,采用高速运算放大器来设计和实现了整形电路,用较少的级数就可得到准高斯波形的输出。研究了整形电路的工作原理,测定了电路的各项技术指标。通过OrCAD仿真测试,当脉宽大于1 μs时,反冲较明显,当脉宽不大于1 μs时,几乎没有反冲。采用辐射源241 Am,得到峰值为60 keV的能谱图,能量分辨率为9.2%。
Abstract
CdZnTe crystal is a new semiconductor material which has high performance used in nuclear radiation detectors at room-temperature. A pulse shaped circuit to the CdZnTe detector is designed. Sallen-Key filter is used to shaping for nuclear pulse, it is designed by using broad-band op-amplifier and only through four stages quasi-Gauss waveform can be obtained. The working principle of the circuit is researched.The bounce back will be visible when the pulse time is greater than 1 μs.and it is not nearly exist when pulse time is less than 1 μs through simulation in OrCAD. All indexes of the circuit are determined. As shown by laboratorial test, the energy spectra is obtained and the energy resolution is 9.2% for241Am 60 keV.
蔡欣, 肖沙里, 张流强, 陈宇晓, 曹玉琳, 蒋建. 基于碲锌镉探测器脉冲整形电路设计[J]. 光电子技术, 2010, 30(1): 64. Cai Xin, Xiao Shali, Zhang Liuqiang, Chen Yuxiao, Cao Yulin, Jiang Jian. Design of Pulse Shaped Circuit Based on CdZnTe Detector[J]. Optoelectronic Technology, 2010, 30(1): 64.