光子学报, 2006, 35 (6): 0906, 网络出版: 2010-06-03
在高于253K温度下的1550nm波长单光子探测实验
Single Photon Detection at 1550 nm Wavelength at Temperature of Above 253 K
摘要
介绍了在高于253K的温度下,实现红外单光子探测的实验.选用拉通电压较高的雪崩光电二极管(APD),设计制作了非线性限流技术保护高温工作的APD,利用半导体热电制冷器,在256.8K的温度下,实现了1550nm波段的单光子探测实验.单光子探测的暗记数率为3.13×10-5ns,在220kHz/s的单光子脉冲速率下,探测效率为2.08%.
Abstract
The selected APDs which have higher punch through voltage are used to prove single photon detection at 1550 nm communication wavelengths at temperature of above 253 K. In the experiment,a controllable nonlinear current limiting circuit is used to protect the APD operated in Geiger mode at high temperature. Single photon detection at 1550 nm communication wavelengths,cooled by a thermo-electrical cooler,were experimentally demonstrated at temperature of 257.8 K. Its dark count is 3.13×10-5 ns and single photon detection efficiency is 2.08%. The experimental data indicate that it is possible to realize single photon detection at higher temperature. The APDs operated at the temperature of above 253 K can simplify the cooling device greatly.
魏正军, 廖常俊, 王金东, 郭健平, 李日豪, 王发强, 刘颂豪. 在高于253K温度下的1550nm波长单光子探测实验[J]. 光子学报, 2006, 35(6): 0906. Wei Zhengjun, Liao Changjun, Wang Jindong, Guo Jianping, Li Rihao, Wang Faqiang, Liu Songhao. Single Photon Detection at 1550 nm Wavelength at Temperature of Above 253 K[J]. ACTA PHOTONICA SINICA, 2006, 35(6): 0906.