为了制作性能良好的光电子集成、光波导等器件，研究纳米多孔氧化硅膜的制备和表征具有重要意义。采用高温氧化多孔硅的方法制备了纳米多孔氧化硅，进行了两种样品的荧光光谱和傅里叶变换红外吸收谱对比检测。相比于多孔硅，多孔氧化硅的发光峰值向短波方向“蓝移”并且发光强度明显降低。多孔硅表面基本是由氢饱和的，而经氧化后的多孔氧化硅表面的Si－H键大部分被Si－O键所代替。结果表明，量子限制效应是样品的荧光光谱“蓝移”的原因，而发光强度的降低则归因于样品表面辐射复合中心的减少和内部纳米硅柱(硅晶粒)尺寸的减小。

In order to obtain excellent optoelectronic integrated device and optical waveguide,it is significant to study the preparation and attribute of nano-porous oxidized silicon. Porous silicon samples were prepared by electrochemical anodic oxidization. After oxidization at high temperature,nano-porous oxidized silicon samples was fabricated. The samples of porous silicon and nano-porous oxidized silicon were detected with photoluminescence and Fourier transform infrared spectroscopy. The test results demonstrated that compared with porous silicon,the photoluminescence(PL)peak of porous oxidized silicon shifted to a shorter wavelength,i. e. so called “blue shift”,along with obvious reduction of PL intensity. The surface of porous silicon was saturated by hydrogen,however,the most of Si-H bonds on the surface of nano-porous silicon were replaced by Si-O bonds after oxidization.The peak blue shift was induced by quantum confinement effect. The reduction of PL intensity was induced by the reduction of radioactive recombination center on the nano-crystalline surface and the diminution of nano-crystalline Si column's size.