电子在微通道内传输过程可以采用解析法和蒙特卡罗模拟进行研究，解析法的优点是物理图像更清晰，但对电子渡越时间的弥散特性不能给出满意的解释。采用统计学的方法对电子在微通道内传输过程的时间分布特性进行了讨论，得到了电子渡越时间的分布函数表达式，并据此可以得到时间弥散度与二次倍增次数的关系，即整个二次电子的渡越时间呈指数分布，且在最可机时间内集中了大量的二次电子。此外，由于碰撞次数对电子渡越时间弥散度的影响，因此在作为高时间分辨元件时应该考虑适当增加通道板两端的电压，以减少碰撞次数，从而降低渡越时间的弥散度和提高整个器件的时间分辨率。

As a compact electron multiplier of high gain,microchannel plate (MCP) is widely used in particle and photon detection systems. MCP is intrinsically very fast detector. The pulse transmission time through the intense electric field is of order 10^－10 second. The transmission process of the channel electron can be investigated by analytical method and Monte Carlo simulation respectively,but the dispersion of transmission time can not be explained with both methods. A statistical method is introduced to investigate the distribution characteristic of the crossing time during the transmission. The distribution function of the crossing time dispersion degree is obtained,i.e. the relationship between dispersion time and second multiplication times. The dispersion degree is dependent on the collision times.