采用电子束蒸发工艺，利用泰勒霍普森相关相干表面轮廓粗糙度仪，研究了不同基底粗糙度、不同二氧化锆薄膜厚度以及不同的离子束辅助能量下所沉积的二氧化锆薄膜的表面粗糙度。结果表明：随着基底表面粗糙度的增加，二氧化锆薄膜表面粗糙度呈现出先缓慢增加，当基底的粗糙度大于10nm后呈现快速增加的趋势；随着二氧化锆薄膜厚度的增加，其表面均方根粗糙度(RMS)先减小后增大；随着辅助沉积离子能量的增加，其表面粗糙度呈现出先减小后增加的趋势。

The surface roughness of Zirconium oxide (ZrO₂) thin films with different thickness and substrate roughness,which were deposited with different ion beam auxiliary energy by electron beam evaporation technique,was studied with Taylor Honson coherence correlation interferometer (Talysurf CCI). The influence of surface roughness of substrates,thickness of ZrO₂ thin films and ion energy of ion beam assisted deposition (IBAD) on surface roughness of ZrO₂ thin films was investigated. The results show that the surface roughness of ZrO₂ thin films increases slowly with the increase of substrate roughness when the substrate roughness is less than 10 nm,then increases quickly when the roughness is more than 10 nm;the surface roughness of ZrO₂ thin films decreases and then increases with the increase of both thickness and ion energy.