以InGaAs/GaAs应变量子阱材料为例,介绍了考虑能带及波函数的混合效应的6×6 Luttinger-Kohn哈密顿量,提出用有限差分法求解含Luttinger-Kohn哈密顿量的有效质量方程,数值模拟得到导带和价带的能带结构,计算应变量子阱的跃迁矩阵元,进而用Lorentzian线形函数计算材料增益。讨论了量子阱阱宽、注入载流子浓度、温度等因素对量子阱材料增益的影响。计算结果表明,压应变使得量子阱有效带隙增大,降低了材料增益的透明电流密度,继而降低器件的阈值,改善器件的输出特性;增益峰值波长和发射波长之间合适的偏差,会使光抽运半导体激光器的阈值电流和工作电流随温度有较小的变化。

Taking InGaAs/GaAs strained quantum wells as an example,the 6×6 Luttinger-Kohn Hamiltonian considering the valence band mixing and the wave function mixing,and by using the finite-difference method to solve the Luttinger-Kohn Hamiltonian of the effective mass equation are introduced. Then the conduction-band structures and the valence-band structures are obtained. The transition matrix element of strained quantum well,and the material gain with linear Lorentzian function are also calcuated. Finally the well width,carrier concentration,temperature and other factors which influence the gain material are discussed. The results show that the compressive strain makes the effective quantum well bandgap increase,reduces the transparency of the material gain current density,and then lower the threshold of the device to improve the output characteristics of the device. The right deviation between the gain peak wavelength and the emission wavelength make optically pumped semiconductor laser′s threshold current and operating current have small changes in temperature.