通过对带绕非晶态软磁合金磁芯片间绝缘技术的几种方法、磁场热处理技术以及绝缘封装技术的研究,实现了非晶态磁芯片间0.6~1.0 μm厚 SiO2绝缘涂层以及片间击穿电压不低于120 V直流;非晶态磁芯纵磁热处理剩磁比大于0.90,横磁热处理剩磁比小于0.20,且绝缘封装前后磁芯磁性能变化小于5%。通过对快脉冲条件下带绝缘涂层大尺寸带绕非晶态软磁合金磁芯的研究,测试获得了试验磁芯的脉冲磁导率以及磁通跳变,其中1 000 mm级铁基非晶磁芯在脉冲间隔500 ns、脉冲宽度120 ns三脉冲串条件下,磁通跳变达到了2.86 T。

This paper describes the research progress of manufacturing technology for amorphous cores,including layer insulation,magnetic field annealing and encapsulation technology. The results show as follows: (1) for the amorphous ribbon surface is coated with 0.6~1.0 μm thick SiO2 insulation,the breakdown voltage is no less than 120 V DC between ribbon layers; (2) through magnetic field annealing,the remanence ratio is larger than 0.90 or less than 0.20 for longitudinal or latitudinal field,respectively,and the amorphous core magnetic property varies within 5% after encapsulation. Through experiments on big amorphous cores with layer insulation under fast-pulsed condition,the pulsed permeability and flux swing were obtained. The flux swing of the Fe-based amorphous core of 1 000 mm outer diameter reaches 2.86 T,under a three-pulse series of 120 ns pulse duration and 500 ns pulse separation.