光子学报, 2010, 39 (5): 792, 网络出版: 2010-07-05
SPPs光刻曝光显影模拟研究
Resist Exposure Developing Simulation Study of SPPs Lithography
摘要
基于薄层抗蚀剂的曝光模型，建立了普遍适应于表面等离子体激元光刻的抗蚀剂曝光模型.选用AZ1500和AR3170两种抗蚀剂对表面等离子体激元干涉光刻曝光显影过程进行计算对比，获得表面等离子体激元光刻显影的最终轮廓.由此得出工艺优化的条件，对表面等离子体激元光刻的进一步工作和实验开展有着重要的意义.
Abstract
Based on the models of thin-layer resist exposure and developing,the SPPs resist exposure model is established.Two kinds of resist of AZ1500 and AR3170 are chosen to simulate the process of exposure and developing,and the final profile of SPPs lithography is obtained.Some craft optimization conditions are also conclucled.The research results are for experiment and future work of SPPs lithography.
郑宇, 王景全, 李敏, 牛晓云, 杜惊雷. SPPs光刻曝光显影模拟研究[J]. 光子学报, 2010, 39(5): 792. ZHENG Yu, WANG Jing-quan, LI Ming, NIU Xiao-yun, DU Jing-lei. Resist Exposure Developing Simulation Study of SPPs Lithography[J]. ACTA PHOTONICA SINICA, 2010, 39(5): 792.
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