硅纳米晶量子点是硅发光研究领域最有潜力、最重要的一个研究方向。用热蒸发法在硅片上生长了富含硅纳米晶体的SiO2薄膜,观测到嵌埋于SiO2薄膜中硅纳米晶的较强光致发光谱;室温下在可见光区对该薄膜进行了椭圆偏振光谱测量研究。用有效介质近似(EMA)模型结合洛伦兹色散模型对椭偏参数进行了拟合,得到直径分别约为3 nm和5 nm大小的硅纳米晶在约300-830 nm光谱区的光学常数值。这些数据在硅基微纳光子学器件的研究中具有一定的参考价值。

Silicon nanocrystals (nc-Si) quantum dots is one of the most promising and important fields in the research and application of Si luminescence nowadays. The nc-Si embedded in SiO2 thin film is grown on Si substrate by using thermal evaporation method. Strong photoluminescence of nc-Si is observed. The films are investigated by spectroscopic ellipsometer in the visible region at room temperature. Employing the effective-medium approximation (EMA) model combined with the Lorentz oscillator model in the ellipsometric parameters fitting,the optical constants of nc-Si with the sizes of 3 nm and 5 nm are obtained,respectively,in the spectral region from 300 nm to 830 nm. The data obtained will be helpful for the design and manufacture of Si-based micro-nanophotonic devices.