III-V族晶片键合技术对于光电器件的制备和实现光电集成有着重要意义, 然而,对于键合界面的电学性质仍然研究较少。 采用热电子发射理论,基于界面态能级在禁带中连续分布的假设,根据分布函数结合I-V测试曲线可建立键合结构的界面态 计算模型。利用该模型对不同条件下键合的InP/GaAs电学性质做了分析比较,通过初始势垒的确定,计算并比较了各种键 合条件下GaAs/InP键合时的界面电荷及界面态密度。实验及计算结果表明疏水处理表面550°C 条件下键合晶片对有更低的 表面初始势垒和更少的界面态密度,具有更好的I-V特性。

Bonding technique of III-V group materials is important for fabrication of optoelectronic devices and realization of opto-electronic integrated circuit (OEIC). However, electrical characteristics of the bonded interface, which is very important for the device design, were seldom investigated yet. Based on the thermionic emission theory and assumption that interface states distribute continuously in the band gap, and combined with distribution function, calculation model of interface states for bonded structure is set up. This model is applied to analyze the electrical characteristics of bonded GaAs/InP wafers, which were subjected to different surface treatment and annealing temperatures. Interface state density was firstly calculated after the definition of initialized electronic barrier of GaAs. Results show that sample bonded at 550°C with hydrophobic surface treatment has the lowest initial barrier height and the smallest interface state density. As a result, it performs best in terms of I-V characteristics.