中国激光, 2010, 37 (8): 2139, 网络出版: 2010-08-13
355 nm纳秒脉冲激光在硅表面照射形成微结构及其荧光检测
Si Microstructure Fabricated by 355 nm Nanosecond Pulsed Laser and Its Fluorescence Microscopy Study
激光技术 纳秒脉冲激光 微加工 荧光检测 硅(100) laser technique nanosecond pulsed laser micromachining fluorescence Si (100)
摘要
利用自主研发设计的波长为355 nm的纳秒脉冲激光微加工系统,在硅(100)表面进行照射加工,形成了线槽宽度约25 μm的微结构。利用荧光显微检测和光谱检测等观测手段,对形成的线槽结构进行观测分析,发现加工过的区域可以发生强烈的光致发光现象。使用波长范围为400-440 nm的照明光照射加工区域,可以激发出波长范围为400-700 nm的荧光,且荧光光强随时间呈现指数衰减变化。从而证实了纳秒脉冲激光的照射加工改变了硅材料的光学属性,为利用脉冲激光加工制备硅基光电器件和结构进行了探索。
Abstract
Slots with a width of about 25 μm is fabricated on Si (100) using a homebuilt micromachining system based on a 355 nm nanosecond pulse laser. Strong photoluminescence (PL) emission from the fabricated area is characterized by fluorescence microscopy and local fluorescence spectroscopy. Fluorescence emission in the wavelength range of 400-700 nm is detected with excitation wavelength range of 400-440 nm. Furthermore,a strong decay of the PL intensity is observed as a function of irradiation time. It can be confirmed that the optical property of silicon is changed after nanosecond pulsed laser fabrication. And a potential method to produce optoelectronic device based on silicon is tried with pulsed laser fabrication.
刘春阳, 孙立东, 傅星, 孙凤鸣, 胡春光, . 355 nm纳秒脉冲激光在硅表面照射形成微结构及其荧光检测[J]. 中国激光, 2010, 37(8): 2139. 刘春阳, 孙立东, 傅星, 孙凤鸣, 胡春光, Peter Zeppenfeld. Si Microstructure Fabricated by 355 nm Nanosecond Pulsed Laser and Its Fluorescence Microscopy Study[J]. Chinese Journal of Lasers, 2010, 37(8): 2139.
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