Chinese Optics Letters, 2010, 8 (8): 757, Published Online: Aug. 12, 2010
Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk Download: 584次
绝缘体上的硅 微环 电光调制器 等离子色散效应 光互连 130.3120 Integrated optics devices 250.6715 Switching 230.5750 Resonators 230.4000 Microstructure fabrication
Abstract
We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20 \mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of <400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.
Xi Xiao, Haihua Xu, Liang Zhou, Zhiyong Li, Yuntao Li, Yude Yu, Jinzhong Yu. Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk[J]. Chinese Optics Letters, 2010, 8(8): 757.