以氧化锌陶瓷靶和金属钴靶为靶材, 利用磁控共溅射方法制备钴掺杂氧化锌(Co-ZnO)薄膜。研究了氧氩比对薄膜的结构、光学和电学性能的影响。结果表明：薄膜具有类似于ZnO的六方纤锌矿结构, 并沿c轴择优生长; 当氧氩比为2∶8时, 薄膜具有较好的纳米晶粒和表面结构, 其霍尔迁移率为2.188×104 cm2/V·s, 最小电阻率为1.326×104 Ω·cm, 其薄膜透光率最高, 且在紫外区有一个相对较强的发射峰。

The Co doped thin ZnO films were prepared on glass substrates using RF magnetron sputtering method. The influence of O-Ar ratio on the structural, electrical and optical properties of the films have been studied. The films are single phase and have wurtzite structure with c-axis orientation, and have good textures with little nano-crystalline grains and smooth surface when O-Ar ratio is 2∶8. The concentration of carriers of these films decreases as O-Ar ratio decreases, but as the Hall mobilities increased the Hall resistance is the lowest when O-Ar ratio is 2∶8. The film deposited at the O-Ar ratio of 2∶8 shows a highest transmittance and has an emission peak.