发光学报, 2010, 31 (4): 503, 网络出版: 2010-08-31
溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响
Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering
ZnO薄膜 射频反应磁控溅射 溅射压强 氩氧比 光致发光 ZnO films RF reactive magnetron sputtering sputtering pressure argon-oxygen ratio photoluminescence
摘要
用射频反应磁控溅射法在不同溅射压强和氩氧比下制备了ZnO薄膜, 通过X射线衍射(XRD)、扫描电镜(SEM)和光致发光(PL)谱等研究了溅射压强和氩氧比对ZnO薄膜结构和光学性质的影响。测量结果显示, 所制备的ZnO薄膜为六角纤锌矿结构, 具有沿c轴的择优取向; 溅射压强P=0.6 Pa, 氩氧比Ar/O2=20/5.5 sccm时, (002)晶面衍射峰强度和平均晶粒尺寸较大, (O02)XRD峰半峰全宽(FWHM)最小, 光致发光紫外峰强度最强。
Abstract
Thin ZnO films were prepared by RF reactive magnetron sputtering with different sputtering pressure and argon-oxygen ratio.The effect of the sputtering pressure and argon-oxygen ratio on the structure and optical properties of the ZnO films were studied using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and F-7100 photoluminescence (PL) spectroscopy. The results indicated that the thin ZnO films have hexagonal wurtzite single phase structure and a preferred orientation with the c axis perpendicular to the substrates.When the sputtering pressure is 0.6 Pa and the argon-oxygen ratio is Ar/O2=20/5.5 sccm, the (002) plane diffraction peak intensity and the grain size are larger, the FWHM of (002) peak is the smallest, UV photoluminescence peak intensity is the strongest.
祐卫国, 张勇, 李璟, 杨峰, CHENG C H, 赵勇. 溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响[J]. 发光学报, 2010, 31(4): 503. YOU Wei-guo, ZHANG Yong, LI Jing, YANG Feng, CHENG C H, ZHAO Yong. Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2010, 31(4): 503.