光学 精密工程, 2010, 18 (6): 1258, 网络出版: 2010-08-31   

808 nm含铝半导体激光器的腔面镀膜

Facet coating for 808 nm Al-containing semiconductor laser diodes
作者单位
1 中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室,吉林 长春 130033
2 中国科学院 研究生院,北京 100049
摘要
研究了高功率808 nm量子阱脊型波导结构含铝半导体激光器在空气中解理时不同镀膜方法对输出激光功率的影响,讨论了半导体激光器的灾变性光学镜面损伤机理及其腔面钝化薄膜的选择特性。对半导体激光器管芯前后腔面不镀膜,前后腔面镀上反射膜和前后腔面先镀上钝化薄膜再镀腔面反射膜方法进行了对比,测试了半导体激光器的输出功率。结果表明,先镀上钝化薄膜的器件比只镀上腔面反射膜的器件输出的激光功率高36%。只镀腔面反射膜的半导体激光器器件在电流为5 A时就失效了,而镀钝化膜的器件在电流为6 A时仍未失效,说明镀钝化薄膜的器件能有效地防止灾变性光学损伤和灾变性光学镜面损伤。在半导体激光器芯片腔面镀上钝化薄膜是提高大功率半导体激光器输出功率的有效方法。
Abstract
The impacts of different facet coating methods on the laser output powers of high-power 808 nm quantum-well ridge-waveguide Al-containing laser diodes cleaved in the air are researched and then the Catastrophical Optical Mirror Damage(COMD) mechanisms of semiconductor laser diodes and the selecting characteristics of a passivation layer are discussed.Three devices that are at uncoated,coated only by reflective films and coated by passivation layers and reflective films on their facets are compared.Obtained results show that the output power of the device with the passivation layers is 36% higher than that of the one only coated with reflective films.Moreover, the semiconductor laser diode coated by reflective film is failured at a current at 5 A, while the device coated by the passivation layers has not failure at the current 6 A.It points out that the passivation layer can effectively prevent Catastrophic Optical Damage (COD) and COMD.The coating passivation film method on the facets of semiconductor laser diodes is effective to the increase of output powers of high powers semiconductor laser diodes.

李再金, 胡黎明, 王烨, 杨晔, 彭航宇, 张金龙, 秦莉, 刘云, 王立军. 808 nm含铝半导体激光器的腔面镀膜[J]. 光学 精密工程, 2010, 18(6): 1258. LI Zai-jin, HU Li-ming, WANG Ye, YANG Ye, PENG Hang-yu, ZHANG Jin-long, QIN Li, LIU Yun, WANG Li-jun. Facet coating for 808 nm Al-containing semiconductor laser diodes[J]. Optics and Precision Engineering, 2010, 18(6): 1258.

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