为了研究掺杂结构为p+-p-n-n+的半导体断路开关的ns脉冲截断机理, 根据流体力学方程和全电流方程推导出半导体断路开关内部载流子运动满足的电流-电压关系表达式, 提出了一种外电路方程和载流子流体力学方程联立求解的1维耦合数值模型。采用该模型对半导体断路开关的ns脉冲截断过程进行了数值模拟, 模拟结果表明: 在截断过程中, n-n+结处的载流子数密度首先开始明显降低, 并出现高电场, 随后p+-p结处也出现类似现象, 随着载流子的抽取, 高电场区域向p-n结处快速移动, 最终在p-n结处完成截断, 而基区载流子数密度在截断前后无明显变化。

In order to investigate the nanosecond current interruption mechanism of semiconductor opening switch (SOS) with a doping profile of p+-p-n-n+ structure, a 1D circuit-fluid coupled model was developed by deriving a current-voltage relation expression from the fluid mechanics equations and the total current density equation. The model simultaneously solves the external circuit equations and the internal fluid mechanics equations of SOS. Numerical results show the evolution of carrier density distribution and electric field in the SOS during the nanosecond pulse opening process. At the beginning of the process, the carrier density in the n-n+ boundary first dropped obviously with a high electric field yield and similar phenomena occurred in the p+-p boundary subsequently. With the abstracting of the carrier, the high electric field regions moved towards the p-n junction rapidly where the current interruption ended off. During the whole process, the carrier density in the base region stayed the same.