强激光与粒子束, 2010, 22 (8): 1716, 网络出版: 2010-09-15
采用AlSb缓冲层生长2.3 μmInGaAsSb/AlGaAsSb多量子阱结构
Growth 2.3 μm InGaAsSb/AlGaAsSb multi-quantum-well via AlSb buffers
AlSb缓冲层 InGaAsSb/AlGaAsSb多量子阱 中红外 锑化物 AlSb buffer layer inGaAsSb/AlGaAsSb multi-quantum-well mid-infrared antimonide
摘要
针对常见的GaSb衬底的InGaAsSb/AlGaAsSb多量子阱结构进行了设计和外延生长。样品通过X-射线测试, 有多级衍射卫星峰出现, 表明量子阱结构的均匀性和界面质量较好, 引入AlSb缓冲层可以降低衬底与外延层之间的界面自由能, 使AlSb起到了一个滤板的作用, 抑制了位错的扩散。光荧光谱测试表明, 室温下量子阱结构中心发光波长在2.3 μm附近。
Abstract
The present paper studied on GaSb-based InGaAsSb/AlGaAsSb multi-quantum-wells materials, had designed and growth multi-quantum-well structures. Characterization of the layers by X-ray diffraction(XRD) and photoluminescence(PL), had been performed. These results showed that the epilayer were high uniformity and quality .AlSb buffer layer could reduced free energy between substrate and epilayer,which is similar filtrate to restrain the dislocations by the AlSb buffer layer.At romm temperature,emision spectra about 2.3 m.
尤明慧, 高欣, 李占国, 刘国军, 李林, 李梅, 王晓华. 采用AlSb缓冲层生长2.3 μmInGaAsSb/AlGaAsSb多量子阱结构[J]. 强激光与粒子束, 2010, 22(8): 1716. You Minghui, Gao Xin, Li Zhanguo, Liu Guojun, Li Lin, Li Mei, Wang Xiaohua. Growth 2.3 μm InGaAsSb/AlGaAsSb multi-quantum-well via AlSb buffers[J]. High Power Laser and Particle Beams, 2010, 22(8): 1716.