利用双温方程对激光烧蚀Si靶的过程进行了数值模拟, 并结合合适的初始条件和边界条件, 研究了在飞秒、皮秒激光作用下, 脉冲波形(矩形、梯形、三角形和高斯形)对Si靶表面载流子和晶格温度分布的影响。结果表明：激光功率密度是影响载流子温升的主要因素, 矩形脉冲激光烧蚀Si靶表面载流子的峰值温度最高, 而高斯分布的脉冲引起靶面载流子峰值温度最低。可见, 激光脉冲波形对Si靶表面载流子的温度分布具有重要影响。所得结果可为制备高质量的薄膜提供理论依据。

Numerical simulation was applied to the study of femto/picosecond laser-target interaction by two-temperature equation with proper initial and boundary conditions. The influence of laser pulse shapes on the carrier and lattice temperatures on the surface of Si-target was investigated. The results indicate that the main factor of temperature increasing is laser pulse power density. Pulse shapes:significantly effect the temperature distribution of the carriers on the Si-target surface, the temperature peak for rectangle pulses is the largest, and the temperature peak of Guassian pulses is the smallest. The conclusions are the theoretical basis of preparing excellent thin films.