传统的电荷耦合器件(CCD), 在400nm以下CCD的量子效率太低, 而传统的基于CCD的紫外增强技术可以提高CCD对紫外波段的响应,但是存在光谱信号弱的缺点, 并且系统分辨率也因此降低。一种自行研制的CCD紫外荧光增强技术, 其创新在于去除CCD表面保护玻璃, 通过真空镀膜的方法将晕苯直接沉积在CCD敏感元件表面,能有效地提高CCD的紫外响应度, 并削弱薄膜对分辨率的影响。对于离散谱线, 253.6nm波长的相对强度提高10倍。对于连续谱线, 紫外波段的信号也得到明显增强, 截止频率从290nm降至220nm。该种方法制作紫外CCD成本不高, 可以实现批量生产, 适合工业应用。

Traditional charge-coupled device (CCD) has low quantum efficiency below 400nm, and UV signal can not be detected, so the range of application is limited. The traditional technology of enhancing CCD can improve the response of the UV band, but there are shortcomings of weak spectral signal, and the system also lowers the resolution. Self-developed CCD UV-enhanced fluorescence technology is presented. Innovation is the removal of CCD surface protection of glass, by vacuum coating method halo benzene CCD sensor deposited on the surface. In this way the response and resolution of CCD in the UV band can be improved. For the discrete spectral lines, 253.6nm wavelength of the relative strength is increased 10 times. For the continuous spectrum, UV-band signal is noticeably enhanced, and cut-off frequency range is cut down from 290nm to 220nm.