理论上模拟分析了硅基绝缘（SOI）槽波导微环谐振腔加盖SiO2包覆层情况下的温度稳定特性。对比了槽微环和纳米线微环，以及不同结构的槽微环谐振腔的温度稳定性。得到在室温下，5 μm半径槽微环在1.55 μm附近的谐振波长随温度变化为0.049 nm/℃，而相同温度、半径以及折射率情况下纳米线微环谐振波长随温度变化为0.092 nm/℃，是槽微环的1.88倍。而且改变槽微环的槽宽和两侧Si条的宽度也会对微环的温度特性有影响，增加槽宽或者减小Si条宽度都会使谐振波长随温度的变化进一步减小。通过采用负温度系数聚合物材料WIR30-490和优化槽波导的结构参数，使得温度对微环谐振波长的影响降低到0.0023 nm/℃。

The temperature stability of the slot-waveguide ring resonators which are based on silicon on insulator (SOI) and embedded with SiO2 is simulated and analyzed theoretically. The temperature dependence of the nano-wire ring, slot-waveguide ring, and the slot rings with different structure parameters are compared. In room temperature, near the wavelength of 1.55 μm, the temperature dependence of the 5 μm-radius slot waveguide ring is 0.049 nm/℃, while the temperature dependence of the nano-wire ring is 0.092 nm/℃ at the same case, which is 1.88 times of that of the slot-waveguide ring. The widths of the slot and Si will also affect the temperature characteristic of the slot-waveguide ring resonators, when the slot width increases or the Si width decreases, the slot-waveguide ring resonators′ temperature dependence will decrease further. By using negative temperature coefficient material WIR 30-490 and optimizing the structure parameters of the slop waveguide, the temperature dependence of the resonate wavelength has decreased to 0.0023 nm/℃.