量子电子学报, 2010, 27 (5): 522, 网络出版: 2010-12-07
近期光刻用ArF准分子激光技术发展
Recent development of ArF excimer laser technology for lithography
摘要
193 nm ArF 准分子激光光刻技术已广泛应用于90 nm以下节点半导体量产。 分析了近期发展用于改进准分子激光性能的 关键技术:主振-功率再生放大 (MOPRA) 结构, 主振-功率振荡 (MOPO) 结构, 主动光谱带宽稳定技术, 先进的气体管 理技术。对光刻用准分子激光光源技术发展趋势进行了简要的讨论。
Abstract
193 nm ArF excimer laser lithography is widely used from below 90 nm node in semiconductor mass production. The key technologies recently employed to improve performance of ArF excimer lasers are analyzed, including master oscillator power regenerative amplifier (MOPRA) and master oscillator power oscillator (MOPO) configurations, active bandwidth stabilization technology, advanced gas management technology. Development trend of excimer laser technology for lithography is briefly discussed.
游利兵, 周翊, 梁勖, 余吟山, 方晓东, 王宇. 近期光刻用ArF准分子激光技术发展[J]. 量子电子学报, 2010, 27(5): 522. YOU Li-bing, ZHOU Yi, LIANG Xu, YU Yin-shan, FANG Xiao-dong, WANG Yu. Recent development of ArF excimer laser technology for lithography[J]. Chinese Journal of Quantum Electronics, 2010, 27(5): 522.
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