光学学报, 2010, 30 (s1): s100103, 网络出版: 2010-12-08  

透射式GaN紫外光电阴极的制备及光电发射性能

Preparation and Photoemission Performance of Transmission-Mode GaN Ultraviolet Photocathode
作者单位
1 重庆大学光电工程学院光电技术与系统教育部重点实验室, 重庆 400044
2 南京理工大学电子工程与光电技术学院, 江苏 南京 210094
摘要
设计了一种以蓝宝石为衬底、AlN为缓冲层的MOCVD外延P-GaN样品作为透射式阴极材料,并利用超高真空表面净化工艺与(Cs,O)激活工艺对其进行了光电阴极制备。紫外光谱响应测试结果表明,所制备的GaN紫外光电阴极在透射式工作模式下具有明显的“门”字响应,最高量子效率15%,与反射式光谱响应曲线相比,透射式阴极的总体响应幅度较低,长波响应阈值向短波推移。最后从阴极材料结构、外延水平及阴极制备工艺方面分析了所得的实验结果。
Abstract
As the photocathode practical application mode, transmission-type structure has important signitication for the research. A MOCVD epitaxial p-type GaN, which has sapphire substrate and AlN buffer layer, was designed as transmission-type material. This material was prepared into GaN photocathode by ultra-high vacuum surface cleaning technique and (Cs,O) activation technique. The UV spectral response of prepared GaN photocathode was measured. The testing results showed that the photocathode had obvious gate-shaped response in the transmission mode, and the maximum quantum efficiency was close to 15%. Comparing to the reflection-mode spectral response curve, the overall responses of transmission-mode were lower and long-wave response threshold moved towards shortwave. The experiment results were analyzed from photocathode material structure, epitaxial level and photocathode preparation techniques.

杜晓晴, 常本康, 钱芸生, 高频, 田健, 王晓晖. 透射式GaN紫外光电阴极的制备及光电发射性能[J]. 光学学报, 2010, 30(s1): s100103. Du Xiaoqing, Chang Benkang, Qian Yunsheng, Gao Pin, Tian Jian, Wang Xiaohui. Preparation and Photoemission Performance of Transmission-Mode GaN Ultraviolet Photocathode[J]. Acta Optica Sinica, 2010, 30(s1): s100103.

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