光学学报, 2010, 30 (s1): s100301, 网络出版: 2010-12-13  

一种基于电子散斑技术的半导体器件寿命预测方法

A Method for Evaluating Life Time of Semiconductor Device Based on Electronic Speckle Pattern Interference
作者单位
桂林电子科技大学电子工程学院, 广西 桂林 541004
摘要
通过对微电子器件可靠性检测现状和电子散斑技术(ESPI)的研究,提出根据半导体器件离面位移变化情况预测其寿命。建立了一套电子散斑测量系统,温控系统为试件提供加速温度应力并控温,同时测量试件封装离面位移的变化规律,根据离面位移数据提取失效激活能,并结合寿命预测模型外推不同温度环境下的工作寿命。对样品S8550进行了100 ℃~190 ℃的序进应力加速实验,得到了各温度点的离面位移数据,并根据离面位移的变化规律快速地提取出了失效激活能,推算了工作环境温度为50 ℃和100 ℃时该试件的可靠寿命。实验数据与相关资料吻合,验证了该方法的可行性。
Abstract
Based on the research of the actuality with microelectronic device reliability testing and electronic speckle pattern interferometer (ESPI), a method that predicts the specimen life time according to the change of out-of-plane displacement of packing is presented. In the method, temperature control system is used to provide the condition of accelerated temperature stress, and the working lifetime of specimen at normal temperature is estimated by the activation energy of specimen extracted according to out-of-plane displacement law. When the specimens S8550 are given the temperature range from 100 ℃ to 190 ℃, the speckle interference stripes are collected at every temperature points. Then the activation energy of specimen is extracted rapidly, and the working lifetime of the specimen at temperature of 50 ℃ and100 ℃ is obtained. The experimental results agree with the data in references well, which demonstrates the feasibility of the proposed method.

袁纵横, 宋美杰, 熊显名. 一种基于电子散斑技术的半导体器件寿命预测方法[J]. 光学学报, 2010, 30(s1): s100301. Yuan Zongheng, Song Meijie, Xiong Xianming. A Method for Evaluating Life Time of Semiconductor Device Based on Electronic Speckle Pattern Interference[J]. Acta Optica Sinica, 2010, 30(s1): s100301.

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