在常温常压条件下, 采用改进的金属催化化学腐蚀方法在n型单晶硅片(100)上制备了大面积垂直于硅衬底、直径均匀、排列整齐的硅纳米线阵列。分析了样品的表面形貌和反射谱, 纳米线直径为10～50 nm。在腐蚀时间分别为15, 30, 60 min时, 纳米线长度分别为9, 17, 34 μm。样品的减反射性能优异, 在300～1 000 nm波段, 得到了2.4%的反射率。初步分析了纳米线阵列的减反射机制和不同腐蚀时间样品的反射率差异。

Large area aligned identical silicon nanowires array were prepared on mono-crystalline n-Si(100) wafers by the metal catalyzed chemical etching method under normal conditions(room temperature, 1.01×105 Pa). The morphologies of prepared samples and reflection spectrum are analyzed, the diameter of SiNWs is 10~50 nm,after etching time of 15, 30 and 60 min the length of SiNWs is 9,17,34 μm, respectively. The reflection spectrua show that the obtained SiNW arrays could drastically suppress the optical reflection over a wide spectral bandwidth ranging of 300~1 000 nm, the reflectance is about 2.4%.The mechanism of antireflectivity and difference among the samples are analyzed.