研究了HgCdTe液相外延薄膜表面两类宏观缺陷的形成原因.研究表明, 大部分表面凹陷点(void)缺陷的形 成是由衬底的蜡沾污所引入的, 而表面凸起点(hill-like)是由衬底边缘脱落的CdZnTe微颗粒造成的, 通过控制外 延生长前的衬底处理过程, 可以抑制这两类缺陷, 从而生长出零(宏观)缺陷密度的优质HgCdTe外延薄膜.

Liquid phase epitaxy is a developed technique for the growth of HgCdTe films. Two kinds of macro defects on the surface of HgCdTe film were studied. It was demonstrated that the origin of the void defects was related to the wax contamination on CdZnTe substrate, while the defects of hill-like were due to the CdZnTe particles detached from the edge of the CdZnTe substrate. Through the fine controlling during the substrate preparation, these two kinds of defects can be depressed and the high quality HgCdTe films with zero defect density can be obtained.