用化学溶液法合成了 Bi2 Cu 0.1 V 0.9 O 5.35-δ (BICUVOX.10)材料, 研究了材料的物相、表面形貌和电学特性. BICUVOX.10薄膜具有室温稳定的高电导γ相. 在LaNiO 3 /Si衬底上, BICUVOX.10薄膜具有 (001)择优取向, 平 均晶粒大小约为200nm. 低频范围的介电损耗来源于氧空位的短程扩散, BICUVOX.10薄膜主要表现为晶粒电导 特性. BICUVOX.10薄膜中氧离子电导激活能约为 0.3 eV, 氧离子电导率约为5×10 -2 S·cm -1 .

Bi 2 Cu 0.1 V 0.9 O 5.35-δ (BICUVOX.10) materials were prepared by chemical solution process, and the phases, surface morphology and electrical properties of the materials were studied. Our results show that the higher-conducting γ-phase of the BICUVOX.10 thin films is stabilized at room temperature. The BICUVOX.10 thin films deposited on LaNiO 3 /Si substrates are preferred (001) orientation and the mean grain size of the films is about 200 nm. The dielectric dispersion of the films may be originated from the short distance diffusion of oxygen vacancies in the low frequency region. The grain boundary dominates the conduction for the BICUVOX.10 thin films. The activation energy of oxygen ionic conduction in the BICUVOX.10 thin films is about 0.3 eV. The oxygen ionic conductivity is about 5×10-2 S·cm -1 .