报道了一种单片集成的1550 nm的四镜三腔谐振腔增强型(RCF)半导体光探测器。通过多腔的设计解决了传统RCE光探测器量子效率、高速响应和光谱响应线宽之间的相互制约问题；利用InP/GaAs低温缓冲层技术解决了大失配异质外延生长的问题，器件可以同时获得高速、高量子效率和窄的光谱响应线宽。制备的器件响应波长为1550 nm，峰值量子效率接近70%，其光谱线宽为0.5 nm，3 dB响应带宽大于8 GHz。

A 1550 nm monolithically integrated resonant cavity-enhanced (RCE) semiconductor photodetector with four-mirror and three-cavity (M4C3) is reported. The contradiction among high quantum efficiency, high response speed and narrow spectral response linewidth is overcome by multi-cavities structure. High-quality GaAs/InP heteroepitaxy is realized by employing a low-temperature buffer layer. By adopting M4C3 structure, high quantum efficiency, high response speed, and narrow spectral response linewidth can be obtained simultaneously. Peak quantum efficiency of about 70%, spectral linewidth of 0.5 nm and 3 dB bandwidth of 8.0 GHz have been obtained in this device.