用直流磁控溅射法在190 ℃玻璃基底上制备了氧化铟锡（ITO）薄膜,利用荧光分光光度计研究了ITO薄膜的光致发光性能。结果表明,室温下ITO薄膜在波长250 nm光源的激发下，分别在467 nm和751 nm处观察到了发光强度较强的蓝光宽带和强度较弱的红光带。上述发光峰的出现分别和ITO薄膜中的氧空位、铟空位等缺陷在禁带中形成的能级有关，其中氧空位形成的施主能级位于导带下1.2 eV处，而铟空位形成的受主能级位于价带下1.65 eV处。

Indium tin oxide (ITO) thin films are deposited on glass substrates at 190 ℃ by direct current (DC) magnetron method. The photoluminescence properties of ITO thin films are investigated by using fluorescence spectrophotometer. With the photon excitation wavelength of 250 nm at room temperature, ITO films show a strong broad blue emission and a weak red emission centered at around 467 and 751 nm, respectively. The blue and red emissions of ITO films are related with the energy level formed by oxygen vacancies and indium vacancies in forbidden band. Oxygen vacancies results in a donor energy level at 1.2 eV below the bottom of the conduction band. Meanwhile, an acceptor energy level resulted by indium vacancies at 1.65 eV above the top of the valence band is observed.